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  • Igbts, Sic Mosfets & Sic Diodes — Silicon Carbide Power Semiconductors

  • RIR120CDM020B | 1200V 20A Merged PiN Schottky SiC Diode | TO-247-2L

RIR120CDM020B | 1200V 20A Merged PiN Schottky SiC Diode | TO-247-2L

$89.42 $177.95
Description RIR120CDM020B Silicon Carbide (SiC) Schottky Diode (MPS) (1 tube of 30 units) The RIR120CDM020B is a high-performance 1200V Merged PiN Schottky (MPS) Silicon Carbide diode engineered for high-efficiency, high-frequency power conversion in demanding industrial and energy applications. With no reverse recovery current and low forward voltage, this device significantly reduces switching losses while enabling improved system efficiency and higher power density. Designed for long-term reliability in harsh operating environments, the RIR120CDM020B supports a maximum junction temperature of 175°C, offers high surge current capability, and provides fast switching independent of temperature. These characteristics make it ideal for EV charging infrastructure, solar inverters, power factor correction circuits and industrial motor drive systems. Supplied in a TO-247-2L package, the device supports efficient thermal management and high current handling while meeting RoHS, Pb-free and halogen-free environmental standards. Key Features 1200V repetitive peak reverse voltage (VRRM) for high-voltage power applications Merged PiN Schottky (MPS) Silicon Carbide diode technology No reverse recovery current for ultra-low switching losses Low forward voltage for improved conduction efficiency Fast switching independent of temperature High surge current capability for robust operation Maximum junction temperature of 175°C TO-247-2L package for excellent thermal performance Pb-free, halogen-free and RoHS compliant Benefits Improves system efficiency by reducing switching losses Enables higher switching frequencies and smaller passive components Supports compact, high power density designs Reduces cooling requirements and thermal management costs Enhances reliability in demanding industrial environments Lowers total system cost through improved efficiency and durability Applications The RIR120CDM020B SiC MPS Diode is ideal for use in: Solar inverters EV charging stations and onboard chargers (OBC) Power Factor Correction (PFC) circuits Industrial motor drives Induction heating and welding equipment High-frequency industrial power supplies Technical Specifications: Absolute Maximum Ratings (TC = 25°C unless otherwise specified) Repetitive peak reverse voltage (VRRM): 1200V Forward current (IF @ 25°C): 20A Non-repetitive forward surge current (IFSM @ 10 ms, 25°C): 135A Non-repetitive forward surge current (IFSM @ 10 ms, 150°C): 115A Non-repetitive peak forward current (IF Max @ 10 μs, 25°C): 1180A Non-repetitive peak forward current (IF Max @ 10 μs, 150°C): 980A I²t value (@ 10 ms, 25°C): 91 A²s I²t value (@ 10 ms, 150°C): 66 A²s Power dissipation (Ptot @ 25°C): 273W Maximum junction temperature: 175°C Package type: TO-247-2L Qualification level: Industrial Electrical Characteristics Summary Diode type: Merged PiN Schottky (MPS) SiC diode Typical forward voltage (VF): 1.39V Maximum reverse current (IR): 100 μA Maximum junction temperature: 175°C Ordering Information Part number: A-RIR120CDM020B Package: TO-247-2L Shipping media: Tubes of 30 units Standard pack quantity: 30 Minimum order quantity: 30 Qualification: Industrial grade   Note: This product is supplied exclusively in tubes of 30 units.
Igbts, Sic Mosfets & Sic Diodes — Silicon Carbide Power Semiconductors

Igbts, Sic Mosfets & Sic Diodes — Silicon Carbide Power Semiconductors

  • RIR120CDM020B | 1200V 20A Merged PiN Schottky SiC Diode | TO-247-2L
    $89.42 $177.95
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