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  • Igbts, Sic Mosfets & Sic Diodes — Silicon Carbide Power Semiconductors

  • RIR120CDM010B | 1200V 10A Merged PiN Schottky SiC Diode

RIR120CDM010B | 1200V 10A Merged PiN Schottky SiC Diode

$49.57 $91.71
Description RIR120CDM010B 1200V Silicon Carbide (SiC) MPS Diode (10A) (1 tube of 30 units) The RIR120CDM010B is a high-efficiency 1200V Merged PiN Schottky (MPS) Silicon Carbide diode designed for high-frequency power conversion in demanding industrial and energy applications. With no reverse recovery current and low forward voltage, this device significantly reduces switching losses while improving system efficiency and power density. Engineered for robust operation in harsh environments, the RIR120CDM010B supports a maximum junction temperature of 175°C, offers strong surge current capability, and delivers fast switching performance independent of temperature. These characteristics make it well suited for use in solar inverters, EV charging infrastructure, power factor correction circuits and industrial motor drive systems. Supplied in a TO-247-2L package, the device provides excellent thermal performance and reliable high-current handling while meeting RoHS, Pb-free and halogen-free environmental standards. Key Features 1200V repetitive peak reverse voltage (VRRM) for high-voltage applications Merged PiN Schottky (MPS) Silicon Carbide diode technology No reverse recovery current for extremely low switching losses Low forward voltage for improved conduction efficiency Fast switching independent of temperature High surge current capability for rugged operation Maximum junction temperature of 175°C TO-247-2L package for efficient thermal management Pb-free, halogen-free and RoHS compliant Benefits Improves overall system efficiency by reducing switching and conduction losses Enables higher switching frequencies and smaller passive components Supports compact, high power density designs Reduces cooling requirements and thermal management costs Enhances system reliability in demanding environments Lowers total system cost through improved efficiency and durability Applications The RIR120CDM010B SiC MPS Diode is ideal for use in: Solar inverters EV charging stations and onboard chargers (OBC) Power Factor Correction (PFC) circuits Industrial motor drives Induction heating and welding equipment High-frequency industrial power supplies Technical Specifications: Absolute Maximum Ratings (TC = 25°C unless otherwise specified) Repetitive peak reverse voltage (VRRM): 1200V Forward current (IF @ 25°C): 10A Non-repetitive forward surge current (IFSM @ 10 ms, 25°C): 79A Non-repetitive forward surge current (IFSM @ 10 ms, 150°C): 67A Non-repetitive peak forward current (IF Max @ 10 μs, 25°C): 810A Non-repetitive peak forward current (IF Max @ 10 μs, 150°C): 690A I²t value (@ 10 ms, 25°C): 31 A²s I²t value (@ 10 ms, 150°C): 23 A²s Power dissipation (Ptot @ 25°C): 153W Maximum junction temperature: 175°C Package type: TO-247-2L Qualification level: Industrial Electrical Characteristics Summary Diode type: Merged PiN Schottky (MPS) SiC diode Typical forward voltage (VF): 1.39V Maximum reverse current (IR): 100 μA Maximum junction temperature: 175°C Ordering Information Part number: RIR120CDM010B Package: TO-247-2L Shipping media: Tubes of 30 units Standard pack quantity: 30 Minimum order quantity: 30 Qualification: Industrial grade   Note: This product is supplied exclusively in tubes of 30 units.
Igbts, Sic Mosfets & Sic Diodes — Silicon Carbide Power Semiconductors

Igbts, Sic Mosfets & Sic Diodes — Silicon Carbide Power Semiconductors

  • RIR120CDM020B | 1200V 20A Merged PiN Schottky SiC Diode | TO-247-2L
    $89.42 $177.95
  • RIR120CDM010B | 1200V 10A Merged PiN Schottky SiC Diode
    $49.57 $91.71
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